NTD4963N-1G

Teknik Özellikler

Case Connection

DRAIN

Polaritychannel Type

N-CHANNEL

Min. Çalışma Sıcaklığı

-55 °C

Moisture Sensitivity Levels

1

JESD-609 Kodu

e3

Risk Rank

5.63

Package Style

IN-LINE

Turn Off Delay Time

14 ns

Package Description

HALOGEN FREE AND ROHS COMPLIANT, CASE369AC-01, IPAK-3

Gate To Source Voltage Vgs

20 V

Operating Temperaturemax

175 °C

REACH Uyumluluk Kodu

not_compliant

RoHS

Compliant

Part Life Cycle Code

End Of Life

Continuous Drain Current Id

10 A

ECCN Kodu

EAR99

Drain Currentmax Abs Id

44 A

Ds Breakdown Voltagemin

30 V

Jesd30 Code

R-PSIP-T3

Drain To Source Resistance

13.6 mΩ

Direnç

9.6 MΩ

Package Shape

RECTANGULAR

Yükseklik

7.49 mm

Yüzey Montaj

NO

Terminal Kaplaması

Tin (Sn)

Radyasyon Dayanımı

No

Genişlik

2.38 mm

Power Dissipationmax Abs

35.7 W

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

33.8 mJ

Transistor Application

SWITCHING

Terminal Formu

THROUGH-HOLE

Pulsed Drain Currentmax Idm

132 A

Operating Mode

ENHANCEMENT MODE

Power Dissipation

35.7 W

Rds On Max

9.6 mΩ

Drain To Source Breakdown Voltage

30 V

Schedule B

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Drain To Source Voltage Vdss

30 V