NTD4910NT4G

Teknik Özellikler

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Genişlik

6.22mm

Transistor Element Material

SILICON

Yayın Yılı

2010

Avalanche Energy Rating Eas

25.3 mJ

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

152A

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

1.37W Ta 27.3W Tc

Jesd30 Code

R-PSSO-G2

RoHS Durumu

RoHS Compliant

Yükseklik

2.38mm

Current Continuous Drain Id25

8.2A Ta 37A Tc

Yüzey Montaj

YES

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

37A

ECCN Kodu

EAR99

Drain Currentmax Abs Id

8.2A

Ds Breakdown Voltagemin

30V

Case Connection

DRAIN

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

JESD-609 Kodu

e3

Turn Off Delay Time

16.5 ns

Input Capacitance Ciss Max Vds

1203pF @ 15V

Gate Charge Qg Max Vgs

15.4nC @ 10V

Montaj Tipi

Surface Mount

Turn On Delay Time

11.6 ns

Number Of Elements

1

Element Configuration

Single

Terminal Sayısı

2

Uzunluk

6.73mm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Vgsth Max Id

2.2V @ 250μA

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 day ago)