NTD4805N-1G

Teknik Özellikler

Continuous Drain Current Id

88A

Power Dissipation

2.24W

Input Capacitance Ciss Max Vds

2865pF @ 12V

Rise Time

20.3ns

RoHS Durumu

RoHS Compliant

Drain To Source Breakdown Voltage

30V

Yüzey Montaj

NO

Drive Voltage Max Rds On Min Rds On

4.5V 11.5V

Gate Charge Qg Max Vgs

48nC @ 11.5V

Jesd30 Code

R-PSIP-T3

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Turn Off Delay Time

20.8 ns

Vgsth Max Id

2.5V @ 250μA

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 week ago)

Gate To Source Voltage Vgs

20V

Drain Currentmax Abs Id

95A

Fet Type

N-Channel

Case Connection

DRAIN

Radyasyon Dayanımı

No

Pin Sayısı

4

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

3

Fall Time Typ

8 ns

Terminal Kaplaması

Tin (Sn)

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Pin Sayısı

4

Parça Durumu

Obsolete

Avalanche Energy Rating Eas

288 mJ

JESD-609 Kodu

e3

Vgs Max

±20V

Rds On Max Id Vgs

5m Ω @ 30A, 10V

Transistor Application

SWITCHING

Current Continuous Drain Id25

12.7A Ta 95A Tc

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Element Configuration

Single