NTD23N03RT4G

Teknik Özellikler

Drain To Source Breakdown Voltage

25V

Drainsource On Resistancemax

0.06Ohm

Rise Time

14.9ns

RoHS Durumu

RoHS Compliant

Input Capacitance Ciss Max Vds

225pF @ 20V

Continuous Drain Current Id

23A

Power Dissipation

22.3W

Jesd30 Code

R-PSSO-G2

Gate Charge Qg Max Vgs

3.76nC @ 4.5V

Drive Voltage Max Rds On Min Rds On

4V 5V

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 day ago)

Terminal Formu

GULL WING

Vgsth Max Id

2V @ 250μA

Turn Off Delay Time

9.9 ns

Drain Currentmax Abs Id

3.8A

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Voltage Rated Dc

25V

Fet Type

N-Channel

Number Of Elements

1

Pin Sayısı

4

Radyasyon Dayanımı

No

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Terminal Sayısı

2

Fall Time Typ

2 ns

Terminal Kaplaması

Tin (Sn)

Turn On Delay Time

2 ns

Akım Değeri

23A

JESD-609 Kodu

e3

Pin Sayısı

4

Parça Durumu

Obsolete

Transistor Application

SWITCHING

Vgs Max

±20V

Rds On Max Id Vgs

45m Ω @ 6A, 10V

Element Configuration

Single