NTB5405NT4G

Teknik Özellikler

Fet Type

N-Channel

Rise Time

153ns

Power Dissipation Max

3W Ta 150W Tc

Uzunluk

10.29mm

Yükseklik

4.83mm

Kurşunsuz

Lead Free

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Drive Voltage Max Rds On Min Rds On

5V 10V

ECCN Kodu

EAR99

Genişlik

9.65mm

Element Configuration

Single

Parça Durumu

Active

Fabrika Tedarik Süresi

9 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Turn On Delay Time

8.5 ns

Fall Time Typ

42 ns

Pulsed Drain Currentmax Idm

280A

Pin Sayısı

3

Terminal Formu

GULL WING

Rds On Max Id Vgs

5.8m Ω @ 40A, 10V

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

3.5V @ 250μA

Yayın Yılı

2008

Drain To Source Breakdown Voltage

40V

Power Dissipation

150W

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Vgs Max

±20V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

116A

Gate Charge Qg Max Vgs

88nC @ 10V

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON