NTB5404NT4G

Teknik Özellikler

Parça Durumu

Obsolete

RoHS Durumu

RoHS Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Kodu

EAR99

Element Configuration

Single

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

125nC @ 10V

Continuous Drain Current Id

136A

Lifecycle Status

LAST SHIPMENTS (Last Updated: 5 days ago)

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

5V 10V

Vgs Max

±20V

Vgsth Max Id

4V @ 250μA

Fet Type

N-Channel

Rise Time

65ns

Yayın Yılı

2009

Drain To Source Breakdown Voltage

40V

Power Dissipation Max

5.4W Ta 254W Tc

Power Dissipation

167W

Kurşunsuz

Lead Free

Turn Off Delay Time

85 ns

Rds On Max Id Vgs

4.5m Ω @ 40A, 10V

Yüzey Montaj

YES

Gate To Source Voltage Vgs

20V

Jesd30 Code

R-PSSO-G2

Pulsed Drain Currentmax Idm

258A

Fall Time Typ

85 ns

Drainsource On Resistancemax

0.0045Ohm

Pin Sayısı

3

Pin Sayısı

3

Terminal Formu

GULL WING

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

167A Tc

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

7000pF @ 32V

Case Connection

DRAIN