NTB25P06T4G

Teknik Özellikler

Current Continuous Drain Id25

27.5A Ta

Operating Mode

ENHANCEMENT MODE

Polaritychannel Type

N-CHANNEL

Pin Sayısı

3

Parça Durumu

Active

Rds On Max Id Vgs

82m Ω @ 25A, 10V

Pulsed Drain Currentmax Idm

80A

Drainsource On Resistancemax

0.082Ohm

Fet Type

P-Channel

Continuous Drain Current Id

27.5A

Power Dissipation Max

120W Tj

Vgs Max

±15V

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA

Gate To Source Voltage Vgs

15V

Yayın Yılı

2012

Kurşunsuz

Lead Free

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Drain To Source Breakdown Voltage

-60V

Fall Time Typ

190 ns

Turn Off Delay Time

43 ns

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Power Dissipation

120W

JESD-609 Kodu

e3

Akım Değeri

-25A

Input Capacitance Ciss Max Vds

1680pF @ 25V

Element Configuration

Single

Jesd30 Code

R-PSSO-G2

Gate Charge Qg Max Vgs

50nC @ 10V

Rise Time

72ns

Voltage Rated Dc

-60V

Case Connection

DRAIN

Avalanche Energy Rating Eas

600 mJ

Yükseklik

4.83mm

Pin Sayısı

3

Drain To Source Voltage Vdss

60V

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Radyasyon Dayanımı

No