NDD02N40-1G

Teknik Özellikler

Fall Time Typ

4 ns

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

4

Current Continuous Drain Id25

1.7A Tc

Number Of Elements

1

Jesd30 Code

R-PSIP-T3

Gate Charge Qg Max Vgs

5.5nC @ 10V

Fabrika Tedarik Süresi

18 Weeks

Rise Time

7ns

Power Dissipation Max

39W Tc

Parça Durumu

Obsolete

Turn On Delay Time

5 ns

Yüzey Montaj

NO

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Fet Type

N-Channel

Vgsth Max Id

2V @ 250μA

Pulsed Drain Currentmax Idm

6.9A

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

121pF @ 25V

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

3

Transistor Element Material

SILICON

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

1.7A

Power Dissipation

39W

Case Connection

DRAIN

JESD-609 Kodu

e3

Pin Sayısı

4

Nem Hassasiyeti (MSL)

3 (168 Hours)

Halogen Free

Halogen Free

Drain To Source Breakdown Voltage

400V

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Rds On Max Id Vgs

5.5 Ω @ 220mA, 10V

Turn Off Delay Time

14 ns

Lifecycle Status

LAST SHIPMENTS (Last Updated: 19 hours ago)