MMDF3N02HDR2G

Teknik Özellikler

Input Capacitance Ciss Max Vds

630pF @ 16V

Voltage Rated Dc

-20V

Yayın Yılı

2006

Gate Charge Qg Max Vgs

18nC @ 10V

Turn Off Delay Time

27 ns

Pulsed Drain Currentmax Idm

19A

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Akım Değeri

-3.8A

Terminal Kaplaması

Tin (Sn)

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

20V

Tepe Reflow Sıcaklığı (°C)

260

Fall Time Typ

21 ns

Drainsource On Resistancemax

0.09Ohm

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Lifecycle Status

OBSOLETE (Last Updated: 1 week ago)

Fet Type

N-Channel

Kurşunsuz Kodu

yes

Vgsth Max Id

2V @ 250μA

RoHS Durumu

RoHS Compliant

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

40

JESD-609 Kodu

e3

Avalanche Energy Rating Eas

405 mJ

Terminal Pozisyonu

DUAL

Rds On Max Id Vgs

90m Ω @ 3A, 10V

Pin Sayısı

8

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

3A

Number Of Elements

2

Power Dissipation Max

2W Ta

Current Continuous Drain Id25

3.8A Ta

Transistor Application

SWITCHING

Power Dissipation

2W

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Vgs Max

±20V

Montaj Tipi

Surface Mount