Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Qualification Status
- Not Qualified
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Number Of Terminals
- 8
- Rohs Code
- No
- Ihs Manufacturer
- MOTOROLA INC
- Transistor Element Material
- SILICON
- Risk Rank
- 8.56
- Terminal Formu
- GULL WING
- Power Dissipationmax Abs
- 2 W
- Ds Breakdown Voltagemin
- 20 V
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Jesd30 Code
- R-PDSO-G8
- Package Description
- SMALL OUTLINE, R-PDSO-G8
- Part Life Cycle Code
- Transferred
- Drainsource On Resistancemax
- 0.09 Ω
- REACH Uyumluluk Kodu
- unknown
- Üretici Parça No
- MMDF2C02HDR2
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Yüzey Montaj
- YES
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Drain Currentmax Id
- 3.8 A
- Terminal Pozisyonu
- DUAL
- Package Body Material
- PLASTIC/EPOXY
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 2
- Operating Temperaturemax
- 150 °C
- Drain Currentmax Abs Id
- 3.8 A
- Package Shape
- RECTANGULAR
- Pulsed Drain Currentmax Idm
- 19 A
- Package Style
- SMALL OUTLINE
- Avalanche Energy Rating Eas
- 405 mJ
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- JESD-609 Kodu
- e0
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