MGSF2N02ELT1G

Teknik Özellikler

Pin Sayısı

3

Voltage Rated Dc

20V

Drain To Source Breakdown Voltage

20V

Ambalaj

Cut Tape (CT)

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

8V

Operating Mode

ENHANCEMENT MODE

Rise Time

95ns

Kurşunsuz

Lead Free

Terminal Sayısı

3

Fall Time Typ

95 ns

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Vgs Max

±8V

Power Dissipation Max

1.25W Ta

Threshold Voltage

1V

Montaj Tipi

Surface Mount

Genişlik

1.4mm

Gate Charge Qg Max Vgs

3.5nC @ 4V

Power Dissipation

1.25W

Kurşunsuz Kodu

yes

Rds On Max Id Vgs

85m Ω @ 3.6A, 4.5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

2.8A

Terminal Kaplaması

Tin (Sn)

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Vgsth Max Id

1V @ 250μA

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

10 Weeks

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Turn Off Delay Time

28 ns

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Turn On Delay Time

6 ns

Terminal Formu

GULL WING

Yüzey Montaj

YES

Input Capacitance Ciss Max Vds

150pF @ 5V

Direnç

85MOhm