IRFS450B

Teknik Özellikler

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

113nC @ 10V

Power Dissipation

96W

Current Continuous Drain Id25

9.6A Tc

Drainsource On Resistancemax

0.39Ohm

Drain To Source Breakdown Voltage

500V

Fet Type

N-Channel

Power Dissipation Max

96W Tc

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 3 days ago)

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Ambalaj

Tube

Transistor Application

SWITCHING

Kılıf / Paket

TO-3P-3 Full Pack

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

6.962g

Fabrika Tedarik Süresi

4 Weeks

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

3800pF @ 25V

Turn On Delay Time

45 ns

Avalanche Energy Rating Eas

990 mJ

Element Configuration

Single

Vgsth Max Id

4V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

3

Transistor Element Material

SILICON

Continuous Drain Current Id

9.6A

Montaj

Through Hole

Case Connection

ISOLATED

Terminal Kaplaması

Tin (Sn)

Jesd30 Code

R-PSFM-T3

Pulsed Drain Currentmax Idm

38.4A

Parça Durumu

Not For New Designs

Gate To Source Voltage Vgs

30V

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

125 ns

Vgs Max

±30V

Turn Off Delay Time

260 ns