IRFP150A

Teknik Özellikler

Drain To Source Breakdown Voltage

100V

Rds On Max Id Vgs

40m Ω @ 21.5A, 10V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

43A Tc

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

97nC @ 10V

Terminal Kaplaması

Tin (Sn)

Turn On Delay Time

17 ns

Pin Sayısı

3

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 3 days ago)

Operating Mode

ENHANCEMENT MODE

Vgsth Max Id

4V @ 250μA

ECCN Kodu

EAR99

Power Dissipation

193W

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Kılıf / Paket

TO-3P-3, SC-65-3

Kurşunsuz Kodu

yes

Direnç

40MOhm

Turn Off Delay Time

80 ns

Element Configuration

Single

Weight

6.401g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

1997

Montaj Tipi

Through Hole

Fall Time Typ

45 ns

Continuous Drain Current Id

43A

Rise Time

20ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Avalanche Energy Rating Eas

740 mJ

Gate To Source Voltage Vgs

20V

Fet Type

N-Channel

Terminal Sayısı

3

Power Dissipation Max

193W Tc

Montaj

Through Hole

Transistor Application

SWITCHING

Ambalaj

Tube

Parça Durumu

Not For New Designs

Kurşunsuz

Lead Free

Number Of Elements

1