IRF634B-FP001

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

100 ns

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 3 weeks ago)

Element Configuration

Single

Vgs Max

±30V

Fet Type

N-Channel

Weight

1.8g

Rds On Max Id Vgs

450m Ω @ 4.05A, 10V

Kılıf / Paket

TO-220-3

Turn On Delay Time

15 ns

Pulsed Drain Currentmax Idm

32.4A

Gate Charge Qg Max Vgs

38nC @ 10V

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

30V

Fall Time Typ

65 ns

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

8.1A

Kurşunsuz Kodu

yes

Ambalaj

Tube

Power Dissipation

74W

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Breakdown Voltage

250V

JESD-609 Kodu

e3

Number Of Elements

1

Current Continuous Drain Id25

8.1A Tc

Montaj Tipi

Through Hole

Montaj

Through Hole

Vgsth Max Id

4V @ 250μA

Avalanche Energy Rating Eas

200 mJ

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Jesd30 Code

R-PSFM-T3

Jedec95 Code

TO-220AB

Rise Time

75ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Power Dissipation Max

74W Tc