HUFA75307T3ST

Teknik Özellikler

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Terminal Pozisyonu

DUAL

Turn On Delay Time

5 ns

Element Configuration

Single

Uzunluk

6.7mm

Rise Time

30ns

Radyasyon Dayanımı

No

Vgsth Max Id

4V @ 250μA

Voltage Rated Dc

55V

Yükseklik

1.8mm

Kurşunsuz Kodu

yes

Drainsource On Resistancemax

0.09Ohm

Terminal Formu

GULL WING

Kurşunsuz

Lead Free

Kılıf / Paket

TO-261-4, TO-261AA

Transistor Element Material

SILICON

Rds On Max Id Vgs

90m Ω @ 2.6A, 10V

Parça Durumu

Active

Gate Charge Qg Max Vgs

17nC @ 20V

Genişlik

3.7mm

Number Of Elements

1

Drain To Source Breakdown Voltage

55V

Terminal Sayısı

4

Yayın Yılı

2002

Pin Sayısı

4

Continuous Drain Current Id

2.6A

Power Dissipation Max

1.1W Ta

Seri

Automotive, AEC-Q101, UltraFET™

Ambalaj

Tape & Reel (TR)

Turn Off Delay Time

35 ns

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Fet Type

N-Channel

Case Connection

DRAIN

Contact Plating

Tin