HUF76609D3ST

Teknik Özellikler

Number Of Elements

1

Drain To Source Breakdown Voltage

100V

Rds On Max Id Vgs

160m Ω @ 10A, 10V

Parça Durumu

Active

Gate Charge Qg Max Vgs

16nC @ 10V

Continuous Drain Current Id

10A

Power Dissipation Max

49W Tc

Seri

UltraFET™

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

2

Pin Sayısı

3

Jesd30 Code

R-PSSO-G2

Fet Type

N-Channel

ECCN Kodu

EAR99

Case Connection

DRAIN

Current Continuous Drain Id25

10A Tc

Contact Plating

Tin

Turn Off Delay Time

30 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Akım Değeri

10A

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Weight

260.37mg

Input Capacitance Ciss Max Vds

425pF @ 25V

Power Dissipation

49W

Vgs Max

±16V

Jedec95 Code

TO-252AA

Fall Time Typ

28 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

16V

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

not_compliant

Fabrika Tedarik Süresi

8 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED