HUF75639S3

Teknik Özellikler

ECCN Kodu

EAR99

Fet Type

N-Channel

Terminal Kaplaması

Tin (Sn)

Case Connection

DRAIN

Current Continuous Drain Id25

56A Tc

Kurşunsuz Kodu

yes

Voltage Rated Dc

100V

Turn Off Delay Time

20 ns

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Through Hole

Operating Mode

ENHANCEMENT MODE

Akım Değeri

56A

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Drainsource On Resistancemax

0.025Ohm

Input Capacitance Ciss Max Vds

2000pF @ 25V

Weight

2.084g

Power Dissipation

200W

Vgs Max

±20V

Fall Time Typ

25 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Drain To Source Breakdown Voltage

100V

Gate To Source Voltage Vgs

20V

Transistor Application

SWITCHING

Rds On Max Id Vgs

25m Ω @ 56A, 10V

Parça Durumu

Active

Gate Charge Qg Max Vgs

130nC @ 20V

Fabrika Tedarik Süresi

9 Weeks

Continuous Drain Current Id

56A

Power Dissipation Max

200W Tc

Rise Time

60ns

Seri

UltraFET™

Ambalaj

Tube