HUF75639P3

Teknik Özellikler

Fall Time Typ

25 ns

Vgs Max

±20V

Jedec95 Code

TO-220AB

Power Dissipation

200W

Weight

1.8g

Input Capacitance Ciss Max Vds

2000pF @ 25V

Threshold Voltage

4V

Montaj Tipi

Through Hole

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Akım Değeri

56A

Operating Mode

ENHANCEMENT MODE

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Turn Off Delay Time

20 ns

Current Continuous Drain Id25

56A Tc

Contact Plating

Tin

Case Connection

DRAIN

Fet Type

N-Channel

ECCN Kodu

EAR99

Yayın Yılı

2002

Pin Sayısı

3

Terminal Sayısı

3

Ambalaj

Tube

Seri

UltraFET™

Power Dissipation Max

200W Tc

Continuous Drain Current Id

56A

Genişlik

4.83mm

Parça Durumu

Active

Gate Charge Qg Max Vgs

130nC @ 20V

Rds On Max Id Vgs

25m Ω @ 56A, 10V

Drain To Source Breakdown Voltage

100V

Number Of Elements

1

Transistor Element Material

SILICON

Kılıf / Paket

TO-220-3

Kurşunsuz

Lead Free

Yükseklik

9.4mm

Voltage Rated Dc

100V

Kurşunsuz Kodu

yes