HUF75639G3

Teknik Özellikler

Ambalaj

Tube

Seri

UltraFET™

Power Dissipation Max

200W Tc

Continuous Drain Current Id

56A

Pin Sayısı

3

Yayın Yılı

2002

Terminal Sayısı

3

Drain To Source Breakdown Voltage

100V

Number Of Elements

1

Genişlik

4.82mm

Gate Charge Qg Max Vgs

130nC @ 20V

Parça Durumu

Active

Rds On Max Id Vgs

25m Ω @ 56A, 10V

Montaj Tipi

Through Hole

Threshold Voltage

4V

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Akım Değeri

56A

Fall Time Typ

25 ns

Vgs Max

±20V

Power Dissipation

200W

Input Capacitance Ciss Max Vds

2000pF @ 25V

Weight

6.39g

Current Continuous Drain Id25

56A Tc

Contact Plating

Tin

Case Connection

DRAIN

Fet Type

N-Channel

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Turn Off Delay Time

20 ns

Vgsth Max Id

4V @ 250μA

Radyasyon Dayanımı

No

Rise Time

60ns

Nominal Vgs

4 V

Reach Svhc

No SVHC

Uzunluk

15.87mm

Element Configuration

Single