FQU8P10TU

Teknik Özellikler

Montaj Tipi

Through Hole

Rds On Max Id Vgs

530m Ω @ 3.3A, 10V

Rise Time

110ns

Fall Time Typ

35 ns

Drain To Source Breakdown Voltage

-100V

Continuous Drain Current Id

6.6A

Vgs Max

±30V

Pulsed Drain Currentmax Idm

26.4A

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

REACH Uyumluluk Kodu

not_compliant

Drainsource On Resistancemax

0.53Ohm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

15nC @ 10V

Fet Type

P-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Parça Durumu

Active

Fabrika Tedarik Süresi

4 Weeks

Input Capacitance Ciss Max Vds

470pF @ 25V

Montaj

Through Hole

Voltage Rated Dc

-100V

Number Of Elements

1

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

30V

JESD-609 Kodu

e3

Kurşunsuz

Lead Free

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Element Configuration

Single

Seri

QFET®

Weight

343.08mg

Vgsth Max Id

4V @ 250μA

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Akım Değeri

-6.7A

Turn Off Delay Time

20 ns

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant