FQU4N50TU-WS

Teknik Özellikler

Fall Time Typ

30 ns

Drain To Source Breakdown Voltage

500V

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole

Rds On Max Id Vgs

2.7 Ω @ 1.3A, 10V

Gate To Source Voltage Vgs

30V

Rise Time

45ns

Continuous Drain Current Id

2.6A

Element Configuration

Single

Vgsth Max Id

5V @ 250μA

Weight

343.08mg

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Turn Off Delay Time

20 ns

Vgs Max

±30V

Seri

QFET®

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

2.5W Ta 45W Tc

Current Continuous Drain Id25

2.6A Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Power Dissipation

2.5W

Gate Charge Qg Max Vgs

13nC @ 10V

Fet Type

N-Channel

Turn On Delay Time

12 ns

Number Of Elements

1

Ambalaj

Tube

Input Capacitance Ciss Max Vds

460pF @ 25V

Fabrika Tedarik Süresi

8 Weeks

Pin Sayısı

3

Montaj

Through Hole