FQU20N06LTU

Teknik Özellikler

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

5V 10V

Pulsed Drain Currentmax Idm

68.8A

Kurşunsuz Kodu

yes

Radyasyon Dayanımı

No

Montaj Tipi

Through Hole

Rds On Max Id Vgs

60m Ω @ 8.6A, 10V

Rise Time

165ns

Fall Time Typ

70 ns

Drain To Source Breakdown Voltage

60V

Continuous Drain Current Id

17.2A

Uzunluk

6.6mm

Gate Charge Qg Max Vgs

13nC @ 5V

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Parça Durumu

Active

Fabrika Tedarik Süresi

4 Weeks

Input Capacitance Ciss Max Vds

630pF @ 25V

Montaj

Through Hole

Voltage Rated Dc

60V

Turn On Delay Time

10 ns

Number Of Elements

1

Ambalaj

Tube

Seri

QFET®

Weight

343.08mg

Vgsth Max Id

2.5V @ 250μA

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Akım Değeri

17.2A

Turn Off Delay Time

35 ns

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

20V

JESD-609 Kodu

e3

Kurşunsuz

Lead Free

Yükseklik

6.1mm

Element Configuration

Single

Power Dissipation

2.5W

Direnç

60MOhm