FQU17P06TU

Teknik Özellikler

Pulsed Drain Currentmax Idm

48A

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Radyasyon Dayanımı

No

Vgs Max

±25V

Continuous Drain Current Id

-12A

Uzunluk

6.8mm

Montaj Tipi

Through Hole

Rds On Max Id Vgs

135m Ω @ 6A, 10V

Rise Time

100ns

Reach Svhc

No SVHC

Fall Time Typ

60 ns

Contact Plating

Tin

Drain To Source Breakdown Voltage

-60V

Input Capacitance Ciss Max Vds

900pF @ 25V

Fabrika Tedarik Süresi

7 Weeks

Montaj

Through Hole

Turn On Delay Time

13 ns

Voltage Rated Dc

-60V

Number Of Elements

1

Ambalaj

Tube

Gate Charge Qg Max Vgs

27nC @ 10V

Fet Type

P-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Parça Durumu

Active

Threshold Voltage

-4V

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Seri

QFET®

Vgsth Max Id

4V @ 250μA

Weight

343.08mg

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

Turn Off Delay Time

22 ns

Akım Değeri

-12A

Yükseklik

7.57mm

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

25V

JESD-609 Kodu

e3