FQT5P10TF

Teknik Özellikler

Threshold Voltage

-4V

Drain Currentmax Abs Id

1A

Input Capacitance Ciss Max Vds

250pF @ 25V

Fabrika Tedarik Süresi

24 Weeks

Montaj

Surface Mount

Turn On Delay Time

9 ns

Voltage Rated Dc

-100V

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

8.2nC @ 10V

Fet Type

P-Channel

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Parça Durumu

Active

Continuous Drain Current Id

1mA

Uzunluk

6.5mm

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

1.05 Ω @ 500mA, 10V

Rise Time

70ns

Reach Svhc

No SVHC

Fall Time Typ

30 ns

Contact Plating

Tin

Avalanche Energy Rating Eas

55 mJ

Drain To Source Breakdown Voltage

-100V

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

4A

Kurşunsuz Kodu

yes

Radyasyon Dayanımı

No

Vgs Max

±30V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Current Continuous Drain Id25

1A Tc

Power Dissipation Max

2W Tc

Genişlik

3.56mm

Terminal Sayısı

4

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G4

Pin Sayısı

3

Power Dissipation

2W