FQT4N20LTF

Teknik Özellikler

Vgs Max

±20V

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

5V 10V

Avalanche Energy Rating Eas

52 mJ

Contact Plating

Tin

Fall Time Typ

40 ns

Drain To Source Breakdown Voltage

200V

Rds On Max Id Vgs

1.35 Ω @ 425mA, 10V

Montaj Tipi

Surface Mount

Reach Svhc

No SVHC

Rise Time

70ns

Uzunluk

6.5mm

Continuous Drain Current Id

850mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Transistor Element Material

SILICON

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

5.2nC @ 5V

Voltage Rated Dc

200V

Turn On Delay Time

7 ns

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

Input Capacitance Ciss Max Vds

310pF @ 25V

Montaj

Surface Mount

REACH Uyumluluk Kodu

not_compliant

Drain Currentmax Abs Id

0.85A

Threshold Voltage

2V

Terminal Pozisyonu

DUAL

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Vgsth Max Id

2V @ 250μA

Weight

188mg

Turn Off Delay Time

15 ns

Akım Değeri

850mA

Seri

QFET®

Kılıf / Paket

TO-261-4, TO-261AA

Terminal Formu

GULL WING

Kurşunsuz

Lead Free