FQT1N80TF-WS

Teknik Özellikler

Fet Type

N-Channel

Gate Charge Qg Max Vgs

7.2nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj

Surface Mount

Input Capacitance Ciss Max Vds

195pF @ 25V

Fabrika Tedarik Süresi

10 Weeks

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Turn On Delay Time

10 ns

Threshold Voltage

5V

REACH Uyumluluk Kodu

not_compliant

Drain Currentmax Abs Id

0.0002A

Feedback Capmax Crss

5 pF

Vgs Max

±30V

Kurşunsuz Kodu

yes

Drive Voltage Max Rds On Min Rds On

10V

Reach Svhc

No SVHC

Rise Time

25ns

Rds On Max Id Vgs

20 Ω @ 100mA, 10V

Montaj Tipi

Surface Mount

Drain To Source Breakdown Voltage

800V

Fall Time Typ

25 ns

Continuous Drain Current Id

200mA

Power Dissipation

2.1W

Terminal Kaplaması

Tin (Sn)

Pin Sayısı

3

Jesd30 Code

R-PDSO-G4

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

4

Current Continuous Drain Id25

200mA Tc

Transistor Application

SWITCHING

Power Dissipation Max

2.1W Tc

Seri

QFET®

Turn Off Delay Time

15 ns

Terminal Pozisyonu

DUAL

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)