FQPF9P25

Teknik Özellikler

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

24A

Drain To Source Voltage Vdss

250V

Terminal Pozisyonu

SINGLE

Drainsource On Resistancemax

0.62Ohm

Rds On Max Id Vgs

620m Ω @ 3A, 10V

Avalanche Energy Rating Eas

650 mJ

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Drain Currentmax Abs Id

6A

Gate Charge Qg Max Vgs

38nC @ 10V

Fet Type

P-Channel

Input Capacitance Ciss Max Vds

1180pF @ 25V

Kılıf / Paket

TO-220-3 Full Pack

Power Dissipation Max

50W Tc

ECCN Kodu

EAR99

Vgsth Max Id

5V @ 250μA

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

ISOLATED

HTS Kodu

8541.29.00.95

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Fabrika Tedarik Süresi

4 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2013

RoHS Durumu

ROHS3 Compliant

Vgs Max

±30V

Ds Breakdown Voltagemin

250V

Yüzey Montaj

NO

JESD-609 Kodu

e3

Parça Durumu

Active

Jesd30 Code

R-PSFM-T3

Seri

QFET®

Ambalaj

Tube