FQPF8N80C

Teknik Özellikler

Rds On Max Id Vgs

1.55 Ω @ 4A, 10V

Continuous Drain Current Id

8A

Drain Currentmax Abs Id

8A

Avalanche Energy Rating Eas

850 mJ

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

45nC @ 10V

Power Dissipation Max

59W Tc

Voltage Rated Dc

800V

Input Capacitance Ciss Max Vds

2050pF @ 25V

Pin Sayısı

3

ECCN Kodu

EAR99

Vgsth Max Id

5V @ 250μA

Terminal Sayısı

3

Direnç

1.55Ohm

Transistor Application

SWITCHING

Power Dissipation

59W

Weight

2.27g

Rise Time

110ns

Case Connection

ISOLATED

Vgs Max

±30V

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Threshold Voltage

5V

Turn Off Delay Time

65 ns

Number Of Elements

1

Ambalaj

Tube

Current Continuous Drain Id25

8A Tc

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.19mm

Kurşunsuz Kodu

yes

Gate To Source Voltage Vgs

30V

Reach Svhc

No SVHC

Fet Type

N-Channel

Kılıf / Paket

TO-220-3 Full Pack

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V