FQPF45N15V2

Teknik Özellikler

Gate To Source Voltage Vgs

30V

Fet Type

N-Channel

Gate Charge Qg Max Vgs

94nC @ 10V

Power Dissipation Max

66W Tc

Voltage Rated Dc

150V

Input Capacitance Ciss Max Vds

3030pF @ 25V

Kılıf / Paket

TO-220-3 Full Pack

Drainsource On Resistancemax

0.04Ohm

Kurşunsuz

Lead Free

Rds On Max Id Vgs

40m Ω @ 22.5A, 10V

Transistor Element Material

SILICON

Continuous Drain Current Id

45A

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Vgs Max

±30V

Parça Durumu

Active

Fall Time Typ

246 ns

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

JESD-609 Kodu

e3

Element Configuration

Single

Yayın Yılı

2013

Radyasyon Dayanımı

No

Akım Değeri

45A

Jedec95 Code

TO-220AB

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

224 ns

Number Of Elements

1

Current Continuous Drain Id25

45A Tc

Seri

QFET®

Ambalaj

Tube

Turn On Delay Time

22 ns

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Montaj

Through Hole

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

150V

Terminal Kaplaması

Tin (Sn)