FQPF3N25

Teknik Özellikler

Gate Charge Qg Max Vgs

5.2nC @ 10V

Voltage Rated Dc

250V

Power Dissipation Max

27W Tc

Input Capacitance Ciss Max Vds

170pF @ 25V

Rds On Max Id Vgs

2.2 Ω @ 1.15A, 10V

Pulsed Drain Currentmax Idm

9.2A

Continuous Drain Current Id

2.3A

Avalanche Energy Rating Eas

40 mJ

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

JESD-609 Kodu

e3

Vgs Max

±30V

Turn Off Delay Time

5.5 ns

Number Of Elements

1

Ambalaj

Tube

Current Continuous Drain Id25

2.3A Tc

Pin Sayısı

3

Vgsth Max Id

5V @ 250μA

Terminal Sayısı

3

ECCN Kodu

EAR99

Power Dissipation

27W

Transistor Application

SWITCHING

Weight

2.27g

HTS Kodu

8541.29.00.95

Case Connection

ISOLATED

Rise Time

25ns

Gate To Source Voltage Vgs

30V

Fet Type

N-Channel

Kılıf / Paket

TO-220-3 Full Pack

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Kurşunsuz Kodu

yes

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

20 ns

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Akım Değeri

2.3A

Radyasyon Dayanımı

No