FQPF33N10L

Teknik Özellikler

Case Connection

ISOLATED

Rise Time

470ns

Weight

2.27g

Power Dissipation

41W

Transistor Application

SWITCHING

Terminal Sayısı

3

Vgsth Max Id

2V @ 250μA

ECCN Kodu

EAR99

Pin Sayısı

3

Current Continuous Drain Id25

18A Tc

Ambalaj

Tube

Turn Off Delay Time

70 ns

Number Of Elements

1

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

18A

Pulsed Drain Currentmax Idm

72A

Rds On Max Id Vgs

52m Ω @ 9A, 10V

Input Capacitance Ciss Max Vds

1630pF @ 25V

Voltage Rated Dc

100V

Power Dissipation Max

41W Tc

Gate Charge Qg Max Vgs

40nC @ 5V

Fabrika Tedarik Süresi

10 Weeks

Uzunluk

10.36mm

Terminal Kaplaması

Tin (Sn)

Drain To Source Breakdown Voltage

100V

Turn On Delay Time

17 ns

Drive Voltage Max Rds On Min Rds On

5V 10V

Montaj

Through Hole

Seri

QFET®

Genişlik

4.9mm

Akım Değeri

18A

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Radyasyon Dayanımı

No

Yayın Yılı

2013

Fall Time Typ

120 ns