FQPF33N10

Teknik Özellikler

Kılıf / Paket

TO-220-3 Full Pack

Input Capacitance Ciss Max Vds

1500pF @ 25V

Voltage Rated Dc

100V

Power Dissipation Max

41W Tc

Gate Charge Qg Max Vgs

51nC @ 10V

Fet Type

N-Channel

Gate To Source Voltage Vgs

25V

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Through Hole

Continuous Drain Current Id

18A

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

72A

Rds On Max Id Vgs

52m Ω @ 9A, 10V

Kurşunsuz

Lead Free

Drainsource On Resistancemax

0.052Ohm

Ambalaj

Tube

Seri

QFET®

Current Continuous Drain Id25

18A Tc

Number Of Elements

1

Turn Off Delay Time

80 ns

RoHS Durumu

ROHS3 Compliant

Akım Değeri

18A

Yayın Yılı

2013

Radyasyon Dayanımı

No

Element Configuration

Single

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

JESD-609 Kodu

e3

Parça Durumu

Active

Fall Time Typ

110 ns

Vgs Max

±25V

Case Connection

ISOLATED

Rise Time

195ns

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

4 Weeks

Power Dissipation

41W

Weight

2.27g

Vgsth Max Id

4V @ 250μA