FQPF2N70

Teknik Özellikler

Rds On Max Id Vgs

6.3 Ω @ 1A, 10V

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

8A

Drain Currentmax Abs Id

2A

Continuous Drain Current Id

2A

Kurşunsuz Kodu

yes

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate To Source Voltage Vgs

30V

Fet Type

N-Channel

Gate Charge Qg Max Vgs

11nC @ 10V

Voltage Rated Dc

700V

Power Dissipation Max

28W Tc

Kılıf / Paket

TO-220-3 Full Pack

Input Capacitance Ciss Max Vds

350pF @ 25V

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Through Hole

Pin Sayısı

3

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

3

Vgsth Max Id

5V @ 250μA

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

700V

Weight

2.27g

Fabrika Tedarik Süresi

5 Weeks

Power Dissipation

28W

Transistor Application

SWITCHING

Case Connection

ISOLATED

Rise Time

80ns

Fall Time Typ

70 ns

Parça Durumu

Active

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Vgs Max

±30V

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Akım Değeri

2A