FQPF2N60C

Teknik Özellikler

Input Capacitance Ciss Max Vds

235pF @ 25V

Power Dissipation Max

23W Tc

Voltage Rated Dc

600V

Gate Charge Qg Max Vgs

12nC @ 10V

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

2A

Drain Currentmax Abs Id

2A

Pulsed Drain Currentmax Idm

8A

Rds On Max Id Vgs

4.7 Ω @ 1A, 10V

Ambalaj

Tube

Current Continuous Drain Id25

2A Tc

Turn Off Delay Time

24 ns

Number Of Elements

1

Threshold Voltage

4V

Vgs Max

±30V

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 9 hours ago)

Rise Time

25ns

Case Connection

ISOLATED

Transistor Application

SWITCHING

Power Dissipation

23W

Weight

2.27g

ECCN Kodu

EAR99

Vgsth Max Id

4V @ 250μA

Terminal Sayısı

3

Direnç

4.7Ohm

Pin Sayısı

3

Kılıf / Paket

TO-220-3 Full Pack

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Reach Svhc

No SVHC

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.19mm

Kurşunsuz Kodu

yes

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Genişlik

4.7mm

Seri

QFET®