FQPF22P10

Teknik Özellikler

Power Dissipation Max

45W Tc

Voltage Rated Dc

-100V

Input Capacitance Ciss Max Vds

1500pF @ 25V

Gate Charge Qg Max Vgs

50nC @ 10V

Continuous Drain Current Id

13.2A

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

100V

Rds On Max Id Vgs

125m Ω @ 6.6A, 10V

Pulsed Drain Currentmax Idm

52.8A

Turn Off Delay Time

60 ns

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

260

Ambalaj

Tube

Current Continuous Drain Id25

13.2A Tc

Vgs Max

±30V

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Power Dissipation

45W

Weight

2.27g

Rise Time

170ns

Case Connection

ISOLATED

Pin Sayısı

3

ECCN Kodu

EAR99

Vgsth Max Id

4V @ 250μA

Terminal Sayısı

3

Kılıf / Paket

TO-220-3 Full Pack

Gate To Source Voltage Vgs

30V

Fet Type

P-Channel

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

16.07mm

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Genişlik

4.9mm

Seri

QFET®

Parça Durumu

Active

Fall Time Typ

110 ns