FQPF20N06L

Teknik Özellikler

Input Capacitance Ciss Max Vds

630pF @ 25V

Voltage Rated Dc

60V

Power Dissipation Max

30W Tc

Gate Charge Qg Max Vgs

13nC @ 5V

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Continuous Drain Current Id

15.7A

Pulsed Drain Currentmax Idm

62.8A

Rds On Max Id Vgs

55m Ω @ 7.85A, 10V

Ambalaj

Tube

Current Continuous Drain Id25

15.7A Tc

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn Off Delay Time

35 ns

Number Of Elements

1

Threshold Voltage

1V

JESD-609 Kodu

e3

Vgs Max

±20V

Case Connection

ISOLATED

Rise Time

156ns

Transistor Application

SWITCHING

Power Dissipation

30W

Weight

2.27g

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

2.5V @ 250μA

Terminal Sayısı

3

ECCN Kodu

EAR99

Pin Sayısı

3

Kılıf / Paket

TO-220-3 Full Pack

Fet Type

N-Channel

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

20V

Kurşunsuz Kodu

yes

Yükseklik

9.19mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Drainsource On Resistancemax

0.07Ohm

Seri

QFET®