FQPF20N06

Teknik Özellikler

Input Capacitance Ciss Max Vds

590pF @ 25V

Power Dissipation Max

30W Tc

Voltage Rated Dc

60V

Gate Charge Qg Max Vgs

15nC @ 10V

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Continuous Drain Current Id

15A

Pulsed Drain Currentmax Idm

60A

Rds On Max Id Vgs

60m Ω @ 7.5A, 10V

Current Continuous Drain Id25

15A Tc

Ambalaj

Tube

Turn Off Delay Time

20 ns

Number Of Elements

1

Vgs Max

±25V

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Rise Time

45ns

Case Connection

ISOLATED

Weight

2.27g

Power Dissipation

30W

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Terminal Sayısı

3

Vgsth Max Id

4V @ 250μA

Pin Sayısı

3

Kılıf / Paket

TO-220-3 Full Pack

Fet Type

N-Channel

Gate To Source Voltage Vgs

25V

Yükseklik

16.07mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Kurşunsuz Kodu

yes

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.06Ohm

Kurşunsuz

Lead Free

Genişlik

4.9mm

Seri

QFET®

Element Configuration

Single

Yayın Yılı

2013

Radyasyon Dayanımı

No