FQPF19N20C

Teknik Özellikler

Weight

2.27g

Power Dissipation

43W

Transistor Application

SWITCHING

Rise Time

150ns

Case Connection

ISOLATED

Pin Sayısı

3

ECCN Kodu

EAR99

Terminal Sayısı

3

Vgsth Max Id

4V @ 250μA

Turn Off Delay Time

135 ns

Number Of Elements

1

Current Continuous Drain Id25

19A Tc

Ambalaj

Tube

Vgs Max

±30V

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Continuous Drain Current Id

19A

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Rds On Max Id Vgs

170m Ω @ 9.5A, 10V

Pulsed Drain Currentmax Idm

76A

Power Dissipation Max

43W Tc

Voltage Rated Dc

200V

Input Capacitance Ciss Max Vds

1080pF @ 25V

Gate Charge Qg Max Vgs

53nC @ 10V

Uzunluk

10.16mm

Fabrika Tedarik Süresi

4 Weeks

Turn On Delay Time

15 ns

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Through Hole

Drain To Source Breakdown Voltage

200V

Terminal Kaplaması

Tin (Sn)

Genişlik

4.7mm

Seri

QFET®

Fall Time Typ

115 ns

Parça Durumu

Active

Element Configuration

Single

Yayın Yılı

2004

Radyasyon Dayanımı

No

Akım Değeri

19A