FQPF19N20

Teknik Özellikler

Current Continuous Drain Id25

11.8A Tc

Ambalaj

Tube

Turn Off Delay Time

55 ns

Number Of Elements

1

Threshold Voltage

5V

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Vgs Max

±30V

Case Connection

ISOLATED

Rise Time

190ns

Weight

2.27g

Power Dissipation

50W

Transistor Application

SWITCHING

Terminal Sayısı

3

Vgsth Max Id

5V @ 250μA

ECCN Kodu

EAR99

Pin Sayısı

3

Input Capacitance Ciss Max Vds

1600pF @ 25V

Voltage Rated Dc

200V

Power Dissipation Max

50W Tc

Gate Charge Qg Max Vgs

40nC @ 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

250 mJ

Continuous Drain Current Id

11.8A

Pulsed Drain Currentmax Idm

48A

Rds On Max Id Vgs

150m Ω @ 5.9A, 10V

Seri

QFET®

Akım Değeri

19.4A

Jedec95 Code

TO-220AB

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Yayın Yılı

2013

Radyasyon Dayanımı

No

Parça Durumu

Active

Fall Time Typ

80 ns

Fabrika Tedarik Süresi

4 Weeks

Terminal Kaplaması

Tin (Sn)

Drain To Source Breakdown Voltage

200V

Turn On Delay Time

20 ns