FQPF19N10

Teknik Özellikler

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Parça Durumu

Active

Fall Time Typ

65 ns

Vgs Max

±25V

RoHS Durumu

ROHS3 Compliant

Akım Değeri

19A

Yayın Yılı

2013

Radyasyon Dayanımı

No

Element Configuration

Single

Number Of Elements

1

Turn Off Delay Time

20 ns

Ambalaj

Tube

Seri

QFET®

Current Continuous Drain Id25

13.6A Tc

Montaj

Through Hole

Pin Sayısı

3

Turn On Delay Time

7.5 ns

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA

Terminal Sayısı

3

Terminal Kaplaması

Tin (Sn)

Drain To Source Breakdown Voltage

100V

ECCN Kodu

EAR99

Power Dissipation

38W

Fabrika Tedarik Süresi

4 Weeks

Transistor Application

SWITCHING

Weight

2.27g

Case Connection

ISOLATED

Rise Time

150ns

Gate To Source Voltage Vgs

25V

Gate Charge Qg Max Vgs

25nC @ 10V

Fet Type

N-Channel

Voltage Rated Dc

100V

Power Dissipation Max

38W Tc

Kılıf / Paket

TO-220-3 Full Pack

Input Capacitance Ciss Max Vds

780pF @ 25V

Rds On Max Id Vgs

100m Ω @ 6.8A, 10V

Kurşunsuz

Lead Free

Transistor Element Material

SILICON