FQP9N90C

Teknik Özellikler

Gate Charge Qg Max Vgs

58nC @ 10V

Input Capacitance Ciss Max Vds

2730pF @ 25V

Power Dissipation Max

205W Tc

Voltage Rated Dc

900V

Rds On Max Id Vgs

1.4 Ω @ 4A, 10V

Avalanche Energy Rating Eas

900 mJ

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

8A

Terminal

Through Hole

Drain Currentmax Abs Id

8A

Threshold Voltage

5V

Vgs Max

±30V

Lifecycle Status

ACTIVE (Last Updated: 5 days ago)

JESD-609 Kodu

e3

Ambalaj

Tube

Current Continuous Drain Id25

8A Tc

Number Of Elements

1

Turn Off Delay Time

100 ns

ECCN Kodu

EAR99

Vgsth Max Id

5V @ 250μA

Terminal Sayısı

3

Direnç

1.4Ohm

Pin Sayısı

3

Rise Time

120ns

Power Dissipation

205W

Transistor Application

SWITCHING

Weight

1.8g

Fet Type

N-Channel

Nominal Vgs

5 V

Gate To Source Voltage Vgs

30V

Reach Svhc

No SVHC

Kılıf / Paket

TO-220-3

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Yükseklik

9.4mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Kurşunsuz Kodu

yes

Radyasyon Dayanımı

No