FQP8N80C

Teknik Özellikler

Rise Time

110ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Weight

1.8g

Power Dissipation

178W

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Terminal Sayısı

3

Vgsth Max Id

5V @ 250μA

Pin Sayısı

3

Current Continuous Drain Id25

8A Tc

Ambalaj

Tube

Turn Off Delay Time

65 ns

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Threshold Voltage

5V

Vgs Max

±30V

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 3 hours ago)

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

850 mJ

Continuous Drain Current Id

8A

Drain Currentmax Abs Id

8A

Rds On Max Id Vgs

1.55 Ω @ 4A, 10V

Input Capacitance Ciss Max Vds

2050pF @ 25V

Power Dissipation Max

178W Tc

Voltage Rated Dc

800V

Gate Charge Qg Max Vgs

45nC @ 10V

Uzunluk

10.1mm

Qualification Status

Not Qualified

Fabrika Tedarik Süresi

6 Weeks

Drain To Source Breakdown Voltage

800V

Turn On Delay Time

40 ns

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Through Hole

Genişlik

4.7mm

Seri

QFET®

Element Configuration

Single

Yayın Yılı

2013

Akım Değeri

8A