FQP7P06

Teknik Özellikler

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Yükseklik

9.4mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Kurşunsuz Kodu

yes

Fet Type

P-Channel

Nominal Vgs

-4 V

Gate To Source Voltage Vgs

25V

Reach Svhc

No SVHC

Kılıf / Paket

TO-220-3

Drain To Source Breakdown Voltage

-60V

Dual Supply Voltage

-60V

Terminal Kaplaması

Tin (Sn)

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

7 ns

Uzunluk

10.1mm

Fabrika Tedarik Süresi

5 Weeks

Qualification Status

Not Qualified

Yayın Yılı

2001

Element Configuration

Single

Akım Değeri

-7A

Jedec95 Code

TO-220AB

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Fall Time Typ

25 ns

Genişlik

4.7mm

Seri

QFET®

Pulsed Drain Currentmax Idm

28A

Drain To Source Voltage Vdss

60V

Rds On Max Id Vgs

410m Ω @ 3.5A, 10V

Avalanche Energy Rating Eas

90 mJ

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

7A

Drain Currentmax Abs Id

7A

Gate Charge Qg Max Vgs

8.2nC @ 10V

Input Capacitance Ciss Max Vds

295pF @ 25V

Power Dissipation Max

45W Tc