FQP6N60C

Teknik Özellikler

Qualification Status

Not Qualified

Fabrika Tedarik Süresi

6 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Through Hole

Terminal Kaplaması

Tin (Sn)

Drain To Source Breakdown Voltage

600V

Seri

QFET®

Jesd30 Code

R-PSFM-T3

Parça Durumu

Not For New Designs

Fall Time Typ

45 ns

Akım Değeri

5.5A

Jedec95 Code

TO-220AB

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Drainsource On Resistancemax

2Ohm

Transistor Element Material

SILICON

Kılıf / Paket

TO-220-3

Gate To Source Voltage Vgs

30V

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Weight

1.8g

Power Dissipation

125W

Transistor Application

SWITCHING

Rise Time

45ns

Terminal Sayısı

3

Additional Feature

FAST SWITCHING

Vgsth Max Id

4V @ 250μA

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn Off Delay Time

45 ns

Number Of Elements

1

Current Continuous Drain Id25

5.5A Tc

Ambalaj

Tube

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 3 days ago)

Vgs Max

±30V