FQP65N06

Teknik Özellikler

Pulsed Drain Currentmax Idm

260A

Rds On Max Id Vgs

16m Ω @ 32.5A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

650 mJ

Continuous Drain Current Id

65A

Gate Charge Qg Max Vgs

65nC @ 10V

Input Capacitance Ciss Max Vds

2410pF @ 25V

Power Dissipation Max

150W Tc

Voltage Rated Dc

60V

ECCN Kodu

EAR99

Direnç

16mOhm

Terminal Sayısı

3

Vgsth Max Id

4V @ 250μA

Pin Sayısı

3

Rise Time

160ns

Weight

1.8g

Power Dissipation

150W

Transistor Application

SWITCHING

Vgs Max

±25V

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Current Continuous Drain Id25

65A Tc

Ambalaj

Tube

Number Of Elements

1

Turn Off Delay Time

90 ns

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Yükseklik

9.4mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Kurşunsuz Kodu

yes

Nominal Vgs

4 V

Fet Type

N-Channel

Gate To Source Voltage Vgs

25V

Reach Svhc

No SVHC

Kılıf / Paket

TO-220-3

Drain To Source Breakdown Voltage

60V

Terminal Kaplaması

Tin (Sn)

Dual Supply Voltage

60V