FQP55N10

Teknik Özellikler

Pulsed Drain Currentmax Idm

220A

Rds On Max Id Vgs

26m Ω @ 27.5A, 10V

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Continuous Drain Current Id

55A

Gate Charge Qg Max Vgs

98nC @ 10V

Input Capacitance Ciss Max Vds

2730pF @ 25V

Voltage Rated Dc

100V

Power Dissipation Max

155W Tc

Vgsth Max Id

4V @ 250μA

Terminal Sayısı

3

Direnç

26mOhm

ECCN Kodu

EAR99

Pin Sayısı

3

Rise Time

250ns

Transistor Application

SWITCHING

Power Dissipation

155W

Weight

1.8g

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

JESD-609 Kodu

e3

Vgs Max

±25V

Ambalaj

Tube

Current Continuous Drain Id25

55A Tc

Number Of Elements

1

Turn Off Delay Time

110 ns

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Kurşunsuz Kodu

yes

Yükseklik

9.4mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Fet Type

N-Channel

Gate To Source Voltage Vgs

25V

Kılıf / Paket

TO-220-3

Drain To Source Breakdown Voltage

100V

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

25 ns

Fabrika Tedarik Süresi

5 Weeks

Uzunluk

10.1mm