FQP4P40

Teknik Özellikler

Gate Charge Qg Max Vgs

23nC @ 10V

Power Dissipation Max

85W Tc

Voltage Rated Dc

-400V

Input Capacitance Ciss Max Vds

680pF @ 25V

Drain To Source Voltage Vdss

400V

Rds On Max Id Vgs

3.1 Ω @ 1.75A, 10V

Continuous Drain Current Id

3.5A

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Avalanche Energy Rating Eas

260 mJ

Vgs Max

±30V

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

JESD-609 Kodu

e3

Threshold Voltage

-5V

Number Of Elements

1

Turn Off Delay Time

35 ns

Current Continuous Drain Id25

3.5A Tc

Ambalaj

Tube

Pin Sayısı

3

ECCN Kodu

EAR99

Terminal Sayısı

3

Vgsth Max Id

5V @ 250μA

Weight

1.8g

Power Dissipation

85W

Transistor Application

SWITCHING

Rise Time

55ns

Gate To Source Voltage Vgs

30V

Reach Svhc

No SVHC

Fet Type

P-Channel

Kılıf / Paket

TO-220-3

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.4mm

Kurşunsuz Kodu

yes

Fall Time Typ

37 ns

Parça Durumu

Active

Element Configuration

Single

Yayın Yılı

2013