FQP4N90C

Teknik Özellikler

Input Capacitance Ciss Max Vds

960pF @ 25V

Power Dissipation Max

140W Tc

Voltage Rated Dc

900V

Gate Charge Qg Max Vgs

22nC @ 10V

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Avalanche Energy Rating Eas

570 mJ

Continuous Drain Current Id

4A

Drain Currentmax Abs Id

4A

Rds On Max Id Vgs

4.2 Ω @ 2A, 10V

Current Continuous Drain Id25

4A Tc

Ambalaj

Tube

Turn Off Delay Time

40 ns

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Threshold Voltage

5V

Vgs Max

±30V

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

JESD-609 Kodu

e3

Rise Time

50ns

Weight

1.8g

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Power Dissipation

140W

ECCN Kodu

EAR99

Terminal Sayısı

3

Vgsth Max Id

5V @ 250μA

Pin Sayısı

3

Kılıf / Paket

TO-220-3

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Reach Svhc

No SVHC

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.2mm

Kurşunsuz Kodu

yes

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Genişlik

4.5mm

Seri

QFET®