FQP4N80

Teknik Özellikler

Rds On Max Id Vgs

3.6 Ω @ 1.95A, 10V

Continuous Drain Current Id

3.9A

Avalanche Energy Rating Eas

460 mJ

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

25nC @ 10V

Power Dissipation Max

130W Tc

Voltage Rated Dc

800V

Input Capacitance Ciss Max Vds

880pF @ 25V

Pin Sayısı

3

ECCN Kodu

EAR99

Vgsth Max Id

5V @ 250μA

Terminal Sayısı

3

Transistor Application

SWITCHING

Power Dissipation

130W

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Weight

1.8g

Rise Time

45ns

Vgs Max

±30V

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

JESD-609 Kodu

e3

Turn Off Delay Time

35 ns

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tube

Current Continuous Drain Id25

3.9A Tc

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.4mm

Kurşunsuz Kodu

yes

Gate To Source Voltage Vgs

30V

Fet Type

N-Channel

Kılıf / Paket

TO-220-3

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

16 ns

Drain To Source Breakdown Voltage

800V

Terminal Kaplaması

Tin (Sn)