FQP4N20L

Teknik Özellikler

Kılıf / Paket

TO-220-3

Input Capacitance Ciss Max Vds

310pF @ 25V

Voltage Rated Dc

200V

Power Dissipation Max

45W Tc

Gate Charge Qg Max Vgs

5.2nC @ 5V

Fet Type

N-Channel

Gate To Source Voltage Vgs

20V

Kurşunsuz Kodu

yes

Avalanche Energy Rating Eas

52 mJ

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain Currentmax Abs Id

3.6A

Continuous Drain Current Id

3.8A

Transistor Element Material

SILICON

Rds On Max Id Vgs

1.35 Ω @ 1.9A, 10V

Kurşunsuz

Lead Free

Seri

QFET®

Ambalaj

Tube

Current Continuous Drain Id25

3.8A Tc

Jesd30 Code

R-PSFM-T3

Turn Off Delay Time

15 ns

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Akım Değeri

3.8A

Radyasyon Dayanımı

No

Element Configuration

Single

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

JESD-609 Kodu

e3

Parça Durumu

Active

Fall Time Typ

40 ns

Vgs Max

±20V

Rise Time

70ns

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

4 Weeks

Power Dissipation

45W

Weight

1.8g

Vgsth Max Id

2V @ 250μA